tsm4 436 60v n - channel mosfet 1 / 6 version: a09 sop - 8 features advance trench process technology high density cell design for ultra low on - resistance application high - side dc/dc conversion notebook severp ordering information part no. package packing TSM4436cs rl sop - 8 2.5kpcs / 13 ?reel TSM4436cs rlg sop - 8 2.5kpcs / 13 reel note: g denote for green product absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 6 0 v gate - source voltage v gs 20 v continuous drain current i d 8 a pulsed drain current i dm 25 a continuous source current (diode conduction) a,b i s 2 .1 a ta = 25 o c 2. 5 maximum power dissipation ta = 0 5 o c p d 1. 6 w operating junction temperature t j +150 o c operating junction and storage temperat ure range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to case thermal resistance r? jf 25 o c/w junction to ambient thermal resistance (pcb mounted) r? ja 50 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 10 sec. product summary v ds (v) r ds(on) (m) i d (a) 36 @ v gs = 10v 4.6 6 0 43 @ v gs = 4.5v 4.2 block diagram n - channel mosfet pin definition : 1. source 8. drain 2 . source 7. drain 3. source 6. drain 4. gate 5. drain
tsm4 436 60v n - channel mosfet 2 / 6 version: a09 electrical specifications parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250ua bv dss 6 0 -- -- v gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 1 -- 3 v gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 60 v, v gs = 0v i dss -- -- 2 a on - state drain current a v ds = 5v, v gs = 10v i d(on) 2 0 -- -- a v gs = 10v, i d = 4.6 a -- 30 36 drain - source on - state resistance a v gs = 4.5v, i d = 4.2 a r ds(on) -- 3 5 43 m forward transconductance a v ds = 15v, i d = 4.5 a g fs -- 13 -- s diode forward voltage i s = 2 a, v gs = 0v v sd -- 0. 9 1. 2 v dynamic b total gate charge q g -- 10.5 16 gate - source charge q gs -- 3.5 -- gate - drain charge v ds = 30 v, i d = 4.6 a, v gs = 4.5 v q gd -- 4.2 -- nc input capacitance c iss -- 1100 -- output capacitance c oss -- 90 -- reverse transfer capacitance v ds = 30 v, v gs = 0v, f = 1.0mhz c rss -- 55 -- pf switching c turn - on delay time t d(on) -- 1 0 15 turn - on rise time t r -- 1 5 2 5 turn - off delay time t d(off) -- 2 5 40 turn - off fall time v dd = 30 v, r l = 5.4 , i d = 5.6 a, v gen = 10 v, r g = 1 t f -- 10 15 ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subject to producti on testing. b. switching time is essentially independent of operating temperature.
tsm4 436 60v n - channel mosfet 3 / 6 version: a09 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain cur rent gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm4 436 60v n - channel mosfet 4 / 6 version: a09 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage single pulse power n ormalized thermal transient impedance, junction - to - ambient
tsm4 436 60v n - channel mosfet 5 / 6 version: a09 sop - 8 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code f or halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code sop - 8 dimension millimeters inches dim min max min max. a 4.80 5.00 0.189 0.196 b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.054 0.068 d 0.35 0.49 0.014 0.019 f 0.40 1.25 0.016 0.049 g 1.27bsc 0.05bsc k 0.10 0.25 0.004 0.009 m 0 7 0 7 p 5.80 6.20 0.229 0.244 r 0.25 0.50 0.010 0.019
tsm4 436 60v n - channel mosfet 6 / 6 version: a09 notice specifications of the products displayed herein are subject to chang e without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual prope rty rights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including li ability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustai ning applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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